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Ultra thin oxide reliability : effects of gate doping concentration and poly-Si.SiO2 interface stress relaxation

dc.contributor.authorWristers, D.
dc.contributor.authorWang, Hui
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorHan, L. K.
dc.contributor.authorKwong, D. L.
dc.contributor.authorFulford, J.
dc.date.accessioned2021-09-29T15:54:40Z
dc.date.available2021-09-29T15:54:40Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1665
dc.sourceIIOimport
dc.titleUltra thin oxide reliability : effects of gate doping concentration and poly-Si.SiO2 interface stress relaxation
dc.typeProceedings paper
dc.contributor.imecauthorDe Wolf, Ingrid
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage77
dc.source.endpage83
dc.source.conferenceInternational Reliability Physics Symposium - IRPS
dc.source.conferencedate29/04/1996
dc.source.conferencelocationDallas, TX USA
imec.availabilityPublished - open access


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