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Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

dc.contributor.authorArora, Rajan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorZhang, En Xia
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorChoi, Bo K.
dc.contributor.authorMitard, Jerome
dc.contributor.authorMeuris, Marc
dc.contributor.authorClaeys, Cor
dc.contributor.authorMadan, Anuj
dc.contributor.authorCressler, John D.
dc.date.accessioned2021-10-18T15:16:16Z
dc.date.available2021-10-18T15:16:16Z
dc.date.issued2010
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16669
dc.sourceIIOimport
dc.titleEffects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1933
dc.source.endpage1939
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue4
dc.source.volume57
imec.availabilityPublished - open access


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