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Experimental investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology

dc.contributor.authorAvolio, G.
dc.contributor.authorRaffo, A.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorVadala, V.
dc.contributor.authorDi Falco, S.
dc.contributor.authorLorenz, Anne
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVannini, G.
dc.date.accessioned2021-10-18T15:16:52Z
dc.date.available2021-10-18T15:16:52Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16683
dc.sourceIIOimport
dc.titleExperimental investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorNauwelaers, Bart
dc.contributor.orcidimecDe Raedt, Walter::0000-0002-7117-7976
dc.source.peerreviewno
dc.source.conferenceWorkshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits - INMMiC
dc.source.conferencedate26/04/2010
dc.source.conferencelocationGoteborg Sweden
imec.availabilityPublished - imec


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