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Stress analysis ad junction leakage of sub-melt laser annealed SiGe epitacial layers

dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorFernandez Lanas, Tatiana
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T15:18:04Z
dc.date.available2021-10-18T15:18:04Z
dc.date.issued2010
dc.identifier.issn0894-6507
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16705
dc.sourceIIOimport
dc.titleStress analysis ad junction leakage of sub-melt laser annealed SiGe epitacial layers
dc.typeJournal article
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage538
dc.source.endpage544
dc.source.journalIEEE Transactions on Semiconductor Manufacturing
dc.source.issue4
dc.source.volume23
imec.availabilityPublished - open access


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