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High quality GdSi1.7 layers formed by high dose channeled implantation

dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorPattyn, Hugo
dc.contributor.authorLangouche, G.
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-09-29T15:55:39Z
dc.date.available2021-09-29T15:55:39Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1670
dc.sourceIIOimport
dc.titleHigh quality GdSi1.7 layers formed by high dose channeled implantation
dc.typeProceedings paper
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorPattyn, Hugo
dc.contributor.imecauthorBender, Hugo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage535
dc.source.endpage540
dc.source.conferenceAdvanced Metallization for Future ULSI
dc.source.conferencedate8/04/1996
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 427


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