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dc.contributor.authorBenbakhti, Brahim
dc.contributor.authorKalna, Karol
dc.contributor.authorChan, KahHou
dc.contributor.authorAsenov, Asen
dc.contributor.authorHellings, Geert
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-18T15:19:56Z
dc.date.available2021-10-18T15:19:56Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16731
dc.sourceIIOimport
dc.titleDesign and analysis of a new In53Ga47As implant-free quantum-well device structure
dc.typeMeeting abstract
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.conferenceE-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials
dc.source.conferencedate7/06/2010
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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