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The mechanism of low-k SiOCH film modification by oxygen atoms

dc.contributor.authorBraginsky, O.V.
dc.contributor.authorKovalev, A.S.
dc.contributor.authorLopaev, D.V.
dc.contributor.authorMalykhin, E.M.
dc.contributor.authorMankelevich, Y.A.
dc.contributor.authorRakhimova, T.V.
dc.contributor.authorRakhimov, A.T.
dc.contributor.authorVasilieva, A.N.
dc.contributor.authorZyryanov, S.M.
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-18T15:25:50Z
dc.date.available2021-10-18T15:25:50Z
dc.date.issued2010
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16795
dc.sourceIIOimport
dc.titleThe mechanism of low-k SiOCH film modification by oxygen atoms
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage73303
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume108
imec.availabilityPublished - open access


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