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Optical proximity correction for 0.3 μm i-line lithography

dc.contributor.authorYen, Anthony
dc.contributor.authorTzviatkov, Plamen
dc.contributor.authorWong, Alfred
dc.contributor.authorJuffermans, Casper
dc.contributor.authorJonckheere, Rik
dc.contributor.authorJaenen, Patrick
dc.contributor.authorGarofalo, J.
dc.contributor.authorOtto, O.
dc.contributor.authorRonse, Kurt
dc.contributor.authorVan den hove, Luc
dc.date.accessioned2021-09-29T15:57:29Z
dc.date.available2021-09-29T15:57:29Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1680
dc.sourceIIOimport
dc.titleOptical proximity correction for 0.3 μm i-line lithography
dc.typeJournal article
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorJaenen, Patrick
dc.contributor.imecauthorRonse, Kurt
dc.contributor.imecauthorVan den hove, Luc
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage141
dc.source.endpage144
dc.source.journalMicroelectronic Engineering
dc.source.volume30
imec.availabilityPublished - imec
imec.internalnotesMicro- and Nano Engineering; 26-28 Sept. 1995; Aix-en-Provence, France


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