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Germanium surface segregation in the silicon passivation of Ge pMOSFETs: influence of the Si precursor

dc.contributor.authorCaymax, Matty
dc.contributor.authorVincent, Benjamin
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-18T15:30:47Z
dc.date.available2021-10-18T15:30:47Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16836
dc.sourceIIOimport
dc.titleGermanium surface segregation in the silicon passivation of Ge pMOSFETs: influence of the Si precursor
dc.typeMeeting abstract
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage11
dc.source.endpage12
dc.source.conference5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate29/01/2010
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - imec


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