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Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a novel 3x2'' vertical rotating disc MOVPE-reactor

dc.contributor.authorZhang, X.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorSys, Carl
dc.contributor.authorDemeester, Piet
dc.contributor.authorCrawley, J. A.
dc.contributor.authorThrush, E. J.
dc.date.accessioned2021-09-29T15:58:03Z
dc.date.available2021-09-29T15:58:03Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1683
dc.sourceIIOimport
dc.titleHighly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a novel 3x2'' vertical rotating disc MOVPE-reactor
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.source.peerreviewno
dc.source.conferenceProceedings of the 8th International Conference on Metal Organic Vapour Phase Epitaxy; 9-13 June 1996; Cardiff, Wales.
dc.source.conferencelocation
imec.availabilityPublished - imec


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