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A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique

dc.contributor.authorCho, Moon Ju
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKaczer, Ben
dc.contributor.authorZahid, Mohammed
dc.contributor.authorSimoen, Eddy
dc.contributor.authorArreghini, Antonio
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T15:35:25Z
dc.date.available2021-10-18T15:35:25Z
dc.date.issued2010
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16867
dc.sourceIIOimport
dc.titleA consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage1384
dc.source.endpage1391
dc.source.journalSolid-State Electronics
dc.source.issue11
dc.source.volume54
imec.availabilityPublished - imec


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