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Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets

dc.contributor.authorCrespo-yepes, A.
dc.contributor.authorMartin-Martinez, J.
dc.contributor.authorRodriguez, R.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorRothschild, Aude
dc.date.accessioned2021-10-18T15:43:03Z
dc.date.available2021-10-18T15:43:03Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16915
dc.sourceIIOimport
dc.titleResistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage138
dc.source.endpage141
dc.source.conference40th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate13/09/2010
dc.source.conferencelocationSevilla Spain
imec.availabilityPublished - open access


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