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TiN metal hardmask etch residues removal on advanced porous low-k and Cu device with corner rounding scheme

dc.contributor.authorCui, Hua
dc.contributor.authorClaes, Martine
dc.contributor.authorSuhard, Samuel
dc.date.accessioned2021-10-18T15:44:11Z
dc.date.available2021-10-18T15:44:11Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16922
dc.sourceIIOimport
dc.titleTiN metal hardmask etch residues removal on advanced porous low-k and Cu device with corner rounding scheme
dc.typeMeeting abstract
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorSuhard, Samuel
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage178
dc.source.endpage179
dc.source.conference10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS
dc.source.conferencedate19/09/2010
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - open access


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