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Study of the etching mechanisme of heavily n type doped Si in HF solutions

dc.contributor.authorCuypers, Daniel
dc.date.accessioned2021-10-18T15:44:53Z
dc.date.available2021-10-18T15:44:53Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16926
dc.sourceIIOimport
dc.titleStudy of the etching mechanisme of heavily n type doped Si in HF solutions
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conferenceVlaams Jongeren congres voor Chemie - VJC
dc.source.conferencedate1/03/2010
dc.source.conferencelocationBlankenberge Belgium
imec.availabilityPublished - imec


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