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Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique

dc.contributor.authorAbou-Khalil, M.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorMatsui, T.
dc.contributor.authorWu, K.
dc.date.accessioned2021-09-30T07:54:37Z
dc.date.available2021-09-30T07:54:37Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1692
dc.sourceIIOimport
dc.titleCalculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage697
dc.source.endpage700
dc.source.conferenceAsia-Pacific Microwave Conference - APMC
dc.source.conferencedate2/12/1997
dc.source.conferencelocationHong-Kong
imec.availabilityPublished - open access


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