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dc.contributor.authorAl-Kofahi, I. S.
dc.contributor.authorZhang, Jenny
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-09-30T07:54:39Z
dc.date.available2021-09-30T07:54:39Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1694
dc.sourceIIOimport
dc.titleContinuing degradation of the SiO2/Si interface after hot hole stress
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2686
dc.source.endpage2692
dc.source.journalJournal of Applied Physics
dc.source.issue6
dc.source.volume81
imec.availabilityPublished - open access


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