Show simple item record

Continuing degradation of the SiO2/Si interface after hot hole stress

dc.contributor.authorAl-Kofahi, I. S.
dc.contributor.authorZhang, Jenny
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-09-30T07:54:39Z
dc.date.available2021-09-30T07:54:39Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1694
dc.sourceIIOimport
dc.titleContinuing degradation of the SiO2/Si interface after hot hole stress
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2686
dc.source.endpage2692
dc.source.journalJournal of Applied Physics
dc.source.issue6
dc.source.volume81
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
1665.pdf
Size:
169.6Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record