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Variation in process conditions of porogen-based low-k films: A method to improve performance without changing existing process steps in a sub-100 nm Cu damascene integration route

dc.contributor.authorDe Roest, David
dc.contributor.authorTravaly, Youssef
dc.contributor.authorBeynet, J.
dc.contributor.authorSprey, Hessel
dc.contributor.authorLabat, J.
dc.contributor.authorHuffman, Craig
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorKaneko, S
dc.contributor.authorMatsushita, K
dc.contributor.authorKobayashi, N
dc.contributor.authorBeyer, Gerald
dc.date.accessioned2021-10-18T15:51:24Z
dc.date.available2021-10-18T15:51:24Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16963
dc.sourceIIOimport
dc.titleVariation in process conditions of porogen-based low-k films: A method to improve performance without changing existing process steps in a sub-100 nm Cu damascene integration route
dc.typeJournal article
dc.contributor.imecauthorDe Roest, David
dc.contributor.imecauthorSprey, Hessel
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.identifier.doi10.1016/j.mee.2009.06.036
dc.source.peerreviewyes
dc.source.beginpage311
dc.source.endpage315
dc.source.journalMicroelectronic Engineering
dc.source.issue3
dc.source.volume87
imec.availabilityPublished - imec


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