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Analysis of TSV-induced strain in silicon by Raman spectroscopy

dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-18T15:55:08Z
dc.date.available2021-10-18T15:55:08Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16984
dc.sourceIIOimport
dc.titleAnalysis of TSV-induced strain in silicon by Raman spectroscopy
dc.typeOral presentation
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.source.peerreviewno
dc.source.conferenceFraunhofer Workshop on Stress Management for 3D IC's Using Through Silicon Vias
dc.source.conferencedate20/10/2010
dc.source.conferencelocationDresden Germany
imec.availabilityPublished - imec


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