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Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments

dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.contributor.authorKittl, Jorge
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T15:57:31Z
dc.date.available2021-10-18T15:57:31Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16997
dc.sourceIIOimport
dc.titleGeneric learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage623
dc.source.endpage625
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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