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Epitaxial growth of III-nitrides on silicon substrates

dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorSijmus, Bram
dc.contributor.authorDerluyn, Joff
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorGermain, Marianne
dc.date.accessioned2021-10-18T15:57:44Z
dc.date.available2021-10-18T15:57:44Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16998
dc.sourceIIOimport
dc.titleEpitaxial growth of III-nitrides on silicon substrates
dc.typeProceedings paper
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage833
dc.source.endpage842
dc.source.conferenceSiGe, Ge, and Related Compounds 4: Materials, Processing and Devices
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 33, Iss. 6


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