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Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorRosseel, Erik
dc.contributor.authorDekoster, Johan
dc.contributor.authorPap, Aron
dc.contributor.authorMaszaros, Albert
dc.contributor.authorKis-Szabo, Krisztian
dc.contributor.authorPavelka, Tibor
dc.date.accessioned2021-10-18T16:16:55Z
dc.date.available2021-10-18T16:16:55Z
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17085
dc.sourceIIOimport
dc.titleContactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorDekoster, Johan
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage122906
dc.source.journalApplied Physics Letters
dc.source.issue12
dc.source.volume96
imec.availabilityPublished - open access


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