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A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon

dc.contributor.authorEverts, Jordi
dc.contributor.authorDas, Jo
dc.contributor.authorVan Den Keybus, Jeroen
dc.contributor.authorGenoe, Jan
dc.contributor.authorGermain, Marianne
dc.contributor.authorDriesen, Johan
dc.date.accessioned2021-10-18T16:17:53Z
dc.date.available2021-10-18T16:17:53Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17089
dc.sourceIIOimport
dc.titleA high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon
dc.typeProceedings paper
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorDriesen, Johan
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage3296
dc.source.endpage3302
dc.source.conferenceIEEE Energy Conversion Congress and Exposition - ECCE
dc.source.conferencedate12/09/2010
dc.source.conferencelocationAtlanta, GA USA
imec.availabilityPublished - open access


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