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6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorEneman, Geert
dc.contributor.authorMitard, Jerome
dc.contributor.authorStesmans, Andre
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRoussel, Philippe
dc.contributor.authorToledano-Luque, Maria
dc.contributor.authorCho, Moon Ju
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGrasser, Tibor
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorTseng, Joshua
dc.contributor.authorTakeoka, Shinji
dc.contributor.authorWang, Wei-E
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T16:24:12Z
dc.date.available2021-10-18T16:24:12Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17114
dc.sourceIIOimport
dc.title6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecAfanasiev, Valeri::0000-0001-5018-4539
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage70
dc.source.endpage73
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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