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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorMitard, Jerome
dc.contributor.authorEneman, Geert
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCrupi, Felice
dc.contributor.authorGrasser, Tibor
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T16:24:28Z
dc.date.available2021-10-18T16:24:28Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17115
dc.sourceIIOimport
dc.titleImplications of channel hot carrier degradation in Si0.45Ge0.55 pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewyes
dc.source.conference41st IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate2/12/2010
dc.source.conferencelocationSan Diego - CA USA
imec.availabilityPublished - imec


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