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Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog anpplications

dc.contributor.authorGaleti, M.
dc.contributor.authorRodrigues, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T16:26:51Z
dc.date.available2021-10-18T16:26:51Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17124
dc.sourceIIOimport
dc.titleEffects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog anpplications
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage80
dc.source.endpage81
dc.source.conferenceSOI Conference
dc.source.conferencedate11/10/2010
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - open access


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