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Impact of top-surface tunnel-oxide nitridation on flash memory performance and reliability

dc.contributor.authorGanguly, Udayan
dc.contributor.authorGuarini, Theresa
dc.contributor.authorWellekens, Dirk
dc.contributor.authorDate, Lucien
dc.contributor.authorCho, Yonah
dc.contributor.authorRothschild, Aude
dc.contributor.authorSwenberg, Johanes
dc.date.accessioned2021-10-18T16:27:19Z
dc.date.available2021-10-18T16:27:19Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17126
dc.sourceIIOimport
dc.titleImpact of top-surface tunnel-oxide nitridation on flash memory performance and reliability
dc.typeJournal article
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDate, Lucien
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage123
dc.source.endpage125
dc.source.journalIEEE Electron Device Letters
dc.source.issue2
dc.source.volume31
imec.availabilityPublished - open access


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