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GaN-on-Si power field effect transistors

dc.contributor.authorGermain, Marianne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDas, Jo
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorVisalli, Domenica
dc.contributor.authorMarcon, Denis
dc.contributor.authorGeens, Karen
dc.contributor.authorViaene, John
dc.contributor.authorSijmus, Bram
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCartuyvels, Rudi
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T16:31:04Z
dc.date.available2021-10-18T16:31:04Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17140
dc.sourceIIOimport
dc.titleGaN-on-Si power field effect transistors
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorCartuyvels, Rudi
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpage171
dc.source.endpage172
dc.source.conferenceInternational Symposium on VLSI Technology Systems and Applications - VLSI-TSA
dc.source.conferencedate26/04/2010
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - imec


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