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A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

dc.contributor.authorGong, Chun
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Kerschaver, Emmanuel
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-18T16:35:53Z
dc.date.available2021-10-18T16:35:53Z
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17159
dc.sourceIIOimport
dc.titleA deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage103507
dc.source.journalApplied Physics Letters
dc.source.issue10
dc.source.volume96
dc.identifier.urlhttp://link.aip.org/link/?APL/96/103507
imec.availabilityPublished - imec


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