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Piezoresistivity and electrical properties of poly-SiGe deposited at CMOS-compatible temperatures

dc.contributor.authorGonzalez, Pilar
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorSeveri, Simone
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorWitvrouw, Ann
dc.date.accessioned2021-10-18T16:38:02Z
dc.date.available2021-10-18T16:38:02Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17167
dc.sourceIIOimport
dc.titlePiezoresistivity and electrical properties of poly-SiGe deposited at CMOS-compatible temperatures
dc.typeProceedings paper
dc.contributor.imecauthorGonzalez, Pilar
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewyes
dc.source.beginpage476
dc.source.endpage479
dc.source.conference40th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate13/09/2010
dc.source.conferencelocationSevilla Spain
imec.availabilityPublished - imec


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