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Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmas

dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorStorm, Wolfgang
dc.contributor.authorKim, Young-Chang
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-30T07:55:43Z
dc.date.available2021-09-30T07:55:43Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1719
dc.sourceIIOimport
dc.titleSurface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmas
dc.typeJournal article
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage3005
dc.source.endpage3014
dc.source.journalJ. Vacuum Science and Technology A
dc.source.issue6
dc.source.volume15
imec.availabilityPublished - open access


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