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Improvement of PECVD silicon–germanium crystallization for CMOS compatible MEMS applications

dc.contributor.authorGuo, Bin
dc.contributor.authorSeveri, Simone
dc.contributor.authorBryce, George
dc.contributor.authorClaes, Gert
dc.contributor.authorVan Hoof, Rita
dc.contributor.authorDu Bois, Bert
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-18T16:47:06Z
dc.date.available2021-10-18T16:47:06Z
dc.date.issued2010
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17200
dc.sourceIIOimport
dc.titleImprovement of PECVD silicon–germanium crystallization for CMOS compatible MEMS applications
dc.typeJournal article
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorBryce, George
dc.contributor.imecauthorVan Hoof, Rita
dc.contributor.imecauthorDu Bois, Bert
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDu Bois, Bert::0000-0003-0147-1296
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecHaspeslagh, Luc::0000-0003-3561-3387
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageD103
dc.source.endpageD106
dc.source.journalJournal of the Electrochemical Society
dc.source.issue2
dc.source.volume157
imec.availabilityPublished - imec


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