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Residue control in the removal of La2O3/HfO2 for high-k/metal gate formation: balancing plasma etch, strip and wet clean

dc.contributor.authorHellin, David
dc.contributor.authorVos, Ingrid
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBoullart, Werner
dc.contributor.authorVertommen, Johan
dc.date.accessioned2021-10-18T16:58:34Z
dc.date.available2021-10-18T16:58:34Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17242
dc.sourceIIOimport
dc.titleResidue control in the removal of La2O3/HfO2 for high-k/metal gate formation: balancing plasma etch, strip and wet clean
dc.typeMeeting abstract
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorVos, Ingrid
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.conference3rd International Plasma Etch and Strip in Microelectronics Workshop - PESM
dc.source.conferencedate4/03/2010
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - imec


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