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Growth of high Ge content SiGe layers for high performance buried channel PMOSFET devices

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorBrus, Stephan
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-18T17:05:44Z
dc.date.available2021-10-18T17:05:44Z
dc.date.issued2010-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17265
dc.sourceIIOimport
dc.titleGrowth of high Ge content SiGe layers for high performance buried channel PMOSFET devices
dc.typeMeeting abstract
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage1916152
dc.source.conference5th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate24/05/2010
dc.source.conferencelocationStockholm Sweden
imec.availabilityPublished - imec


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