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Characterization of silicon surfaces after low temperature H2 annealing prior to low temperature atmospheric pressure epitaxial silicon growth

dc.contributor.authorBender, Hugo
dc.contributor.authorMouche, M. J.
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-09-30T07:56:10Z
dc.date.available2021-09-30T07:56:10Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1726
dc.sourceIIOimport
dc.titleCharacterization of silicon surfaces after low temperature H2 annealing prior to low temperature atmospheric pressure epitaxial silicon growth
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage51
dc.source.endpage56
dc.source.conferenceStructure and Evolution of Surfaces
dc.source.conferencedate2/12/1996
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 440


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