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Cross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devices

dc.contributor.authorBender, Hugo
dc.contributor.authorRoussel, Philippe
dc.date.accessioned2021-09-30T07:56:14Z
dc.date.available2021-09-30T07:56:14Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1727
dc.sourceIIOimport
dc.titleCross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devices
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorRoussel, Philippe
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage465
dc.source.endpage468
dc.source.conferenceMicroscopy of Semiconducting Materials 1997
dc.source.conferencedate7/04/1997
dc.source.conferencelocationOxford UK
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Series; Vol. 157


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