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Removal of post-etch 193-nm photoresist in porous low-k dielectric patterning using UV irradiation and ozonated water
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Removal of post-etch 193-nm photoresist in porous low-k dielectric patterning using UV irradiation and ozonated water
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kesters, Els
;
Le, Quoc Toan
;
Lux, Marcel
;
Prager, Lutz
;
Vereecke, Guy
Journal
Microelectronic Engineering
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1910
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Acq. date: 2025-12-11
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Views
1910
since deposited on 2021-10-18
3
last month
2
last week
Acq. date: 2025-12-11
Citations