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Removal of post-etch 193-nm photoresist in porous low-k dielectric patterning using UV irradiation and ozonated water

dc.contributor.authorKesters, Els
dc.contributor.authorLe, Quoc Toan
dc.contributor.authorLux, Marcel
dc.contributor.authorPrager, Lutz
dc.contributor.authorVereecke, Guy
dc.date.accessioned2021-10-18T17:35:17Z
dc.date.available2021-10-18T17:35:17Z
dc.date.issued2010
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17360
dc.sourceIIOimport
dc.titleRemoval of post-etch 193-nm photoresist in porous low-k dielectric patterning using UV irradiation and ozonated water
dc.typeJournal article
dc.contributor.imecauthorKesters, Els
dc.contributor.imecauthorLe, Quoc Toan
dc.contributor.imecauthorLux, Marcel
dc.contributor.imecauthorVereecke, Guy
dc.contributor.orcidimecLe, Quoc Toan::0000-0002-0206-6279
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage174
dc.source.endpage1679
dc.source.journalMicroelectronic Engineering
dc.source.issue9
dc.source.volume87
imec.availabilityPublished - open access
imec.internalnotesPaper from 11th SEMATECH Conference 2009


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