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Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

dc.contributor.authorKilchytska, Valeria
dc.contributor.authorAlvarado, J.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorPut, Sofie
dc.contributor.authorClaeys, Cor
dc.contributor.authorFlandre, Denis
dc.date.accessioned2021-10-18T17:38:01Z
dc.date.available2021-10-18T17:38:01Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17369
dc.sourceIIOimport
dc.titleGate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage119
dc.source.endpage120
dc.source.conference6th Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI
dc.source.conferencedate25/01/2010
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - open access


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