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On the effective mobility for electrons in MOS inversion channels

dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-09-30T07:57:00Z
dc.date.available2021-09-30T07:57:00Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1737
dc.sourceIIOimport
dc.titleOn the effective mobility for electrons in MOS inversion channels
dc.typeProceedings paper
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage165
dc.source.endpage168
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate8/09/1997
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access


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