Show simple item record

Accurate EUV lithography simulation enabled by calibrated physical resist models

dc.contributor.authorKlostermann, U.K.
dc.contributor.authorMulders, T.
dc.contributor.authorSchmoeller, T.
dc.contributor.authorDemmerle, W.
dc.contributor.authorLorusso, Gian
dc.contributor.authorHendrickx, Eric
dc.date.accessioned2021-10-18T17:42:21Z
dc.date.available2021-10-18T17:42:21Z
dc.date.issued2010-09
dc.identifier.issn0038-111X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17383
dc.sourceIIOimport
dc.titleAccurate EUV lithography simulation enabled by calibrated physical resist models
dc.typeJournal article
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorHendrickx, Eric
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.journalSolid State Technology
dc.identifier.urlhttp://www.electroiq.com/index/display/semiconductors-article-display/2744719178/articles/solid-state-technology/semiconductors/
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
21445.pdf
Size:
383.0Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record