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Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

dc.contributor.authorKobabyashi, Masaharu
dc.contributor.authorMitard, Jerome
dc.contributor.authorIrisawa, Toshihumi
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorMeuris, Marc
dc.contributor.authorSaraswat, Krishna
dc.contributor.authorNishi, Yoshio
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T17:43:37Z
dc.date.available2021-10-18T17:43:37Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17387
dc.sourceIIOimport
dc.titleExperimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage215
dc.source.endpage216
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate15/06/2010
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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