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Combined IV and CV analysis of laser annealed carbon and boron implanted SiGe epitaxial layers

dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHirose, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T17:43:57Z
dc.date.available2021-10-18T17:43:57Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17388
dc.sourceIIOimport
dc.titleCombined IV and CV analysis of laser annealed carbon and boron implanted SiGe epitaxial layers
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage191
dc.source.endpage202
dc.source.conferenceHigh Purity Silicon 11
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 33, Iss. 11


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