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The impact of the S/D extensions on the drain current characteristics of deep submicron Si nMOSFETs at 77K

dc.contributor.authorBiesemans, Serge
dc.contributor.authorSimoen, Eddy
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-30T07:57:19Z
dc.date.available2021-09-30T07:57:19Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1741
dc.sourceIIOimport
dc.titleThe impact of the S/D extensions on the drain current characteristics of deep submicron Si nMOSFETs at 77K
dc.typeProceedings paper
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage564
dc.source.endpage567
dc.source.conferenceESSDERC '97: Proceedings of the 27th European Solid-State Device Research Conference
dc.source.conferencedate22/09/1997
dc.source.conferencelocationStuttgart Germany
imec.availabilityPublished - open access


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