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Patterning capabilities of 40-nm contact holes at 80-nm pitch: EUV vs. Line/Space double exposure immersion lithography

dc.contributor.authorLazzarino, Frederic
dc.contributor.authorTruffert, Vincent
dc.contributor.authorBekaert, Joost
dc.contributor.authorDemuynck, Steven
dc.contributor.authorGoethals, Mieke
dc.contributor.authorStruyf, Herbert
dc.date.accessioned2021-10-18T18:04:41Z
dc.date.available2021-10-18T18:04:41Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17453
dc.sourceIIOimport
dc.titlePatterning capabilities of 40-nm contact holes at 80-nm pitch: EUV vs. Line/Space double exposure immersion lithography
dc.typeMeeting abstract
dc.contributor.imecauthorLazzarino, Frederic
dc.contributor.imecauthorTruffert, Vincent
dc.contributor.imecauthorBekaert, Joost
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.orcidimecLazzarino, Frederic::0000-0001-7961-9727
dc.contributor.orcidimecTruffert, Vincent::0000-0001-7851-830X
dc.contributor.orcidimecBekaert, Joost::0000-0003-3075-3479
dc.source.peerreviewno
dc.source.beginpageF7.4
dc.source.conferenceMRS Spring Meeting Symp. F: Materials, Processes, Integration, and Reliability in Advanced Interconnects for Micro- and Nanoelec
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco US
imec.availabilityPublished - imec


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