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All-wet removal of post-etch photoresist and sidewall residues: Electrical characterization of 90 nm and 30 nm ½ pitch structures

dc.contributor.authorLe, Quoc Toan
dc.contributor.authorDemuynck, Steven
dc.contributor.authorSuhard, Samuel
dc.contributor.authorKlipp, Andreas
dc.contributor.authorVereecke, Bart
dc.contributor.authorVereecke, Guy
dc.date.accessioned2021-10-18T18:07:30Z
dc.date.available2021-10-18T18:07:30Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17462
dc.sourceIIOimport
dc.titleAll-wet removal of post-etch photoresist and sidewall residues: Electrical characterization of 90 nm and 30 nm ½ pitch structures
dc.typeMeeting abstract
dc.contributor.imecauthorLe, Quoc Toan
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorSuhard, Samuel
dc.contributor.imecauthorVereecke, Bart
dc.contributor.imecauthorVereecke, Guy
dc.contributor.orcidimecLe, Quoc Toan::0000-0002-0206-6279
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.source.peerreviewno
dc.source.conferenceSEMATECH Surface Preparation and Cleaning Conference
dc.source.conferencedate22/03/2010
dc.source.conferencelocationAustin, TX USA
imec.availabilityPublished - imec


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