Show simple item record

Drive current improvement in Si tunnel field effect transistors by means of silicide engineering

dc.contributor.authorLeonelli, Daniele
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVerhulst, Anne
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T18:10:17Z
dc.date.available2021-10-18T18:10:17Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17470
dc.sourceIIOimport
dc.titleDrive current improvement in Si tunnel field effect transistors by means of silicide engineering
dc.typeProceedings paper
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage693
dc.source.endpage694
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate22/09/2010
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
20868.pdf
Size:
680.8Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record