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Schottky barrier height of metal contacts on n-type germanium with and without Ge3N4 interlayers

dc.contributor.authorLieten, Ruben
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorThoan, Nguyen Hoang
dc.contributor.authorDegroote, Stefan
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T18:17:49Z
dc.date.available2021-10-18T18:17:49Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17493
dc.sourceIIOimport
dc.titleSchottky barrier height of metal contacts on n-type germanium with and without Ge3N4 interlayers
dc.typeOral presentation
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium I: Materials for End-of-Roadmap Scaling of CMOS Devices
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesI3.7


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