Show simple item record

Influence of growth parameters on Mg doping of GaN by molecular beam epitaxy

dc.contributor.authorLieten, Ruben
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorZhang, Liyang
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T18:18:32Z
dc.date.available2021-10-18T18:18:32Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17495
dc.sourceIIOimport
dc.titleInfluence of growth parameters on Mg doping of GaN by molecular beam epitaxy
dc.typeOral presentation
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium EE: Defects in Inorganic Photovoltaic Materials
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record