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Low-cost solution processed high-k gate dielectric materials for large area circuit applications

dc.contributor.authorLin, Wan-Yu
dc.contributor.authorMuller, Robert
dc.contributor.authorSteudel, Soeren
dc.contributor.authorMyny, Kris
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-18T18:21:23Z
dc.date.available2021-10-18T18:21:23Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17503
dc.sourceIIOimport
dc.titleLow-cost solution processed high-k gate dielectric materials for large area circuit applications
dc.typeMeeting abstract
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpageF2.2
dc.source.conferenceMRS Fall Symposium F: Low-Temperature-Processed Thin-Film Transistors
dc.source.conferencedate28/11/2010
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec


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