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A very compact power amplifier using GaN HEMTs in multi-layer thin-film technology

dc.contributor.authorLiu, Rui
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorVanaverbeke, Fre
dc.contributor.authorDas, Jo
dc.contributor.authorGermain, Marianne
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-18T18:26:05Z
dc.date.available2021-10-18T18:26:05Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17516
dc.sourceIIOimport
dc.titleA very compact power amplifier using GaN HEMTs in multi-layer thin-film technology
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecDe Raedt, Walter::0000-0002-7117-7976
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage37
dc.source.endpage40
dc.source.conferenceWorkshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits - INMMiC
dc.source.conferencedate26/04/2010
dc.source.conferencelocationGoteborg Sweden
imec.availabilityPublished - open access


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